CEE02N6A Specs and Replacement
Type Designator: CEE02N6A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 46 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
Package: TO126
CEE02N6A substitution
- MOSFET ⓘ Cross-Reference Search
CEE02N6A datasheet
cee02n6a.pdf
CEE02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1.3A, RDS(ON) = 8.5 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-126 package. G G D S CEE SERIES TO-126 S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units D... See More ⇒
cee02n6g.pdf
CEE02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 2.0A, RDS(ON) = 5.0 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-126 package. G CEE SERIES TO-126 S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Sour... See More ⇒
Detailed specifications: CED83A3, CED83A3G, CED840A, CED84A4, CED85A3, CED93A3, CEDF634, CEDF640, 2N7000, CEE02N6G, CEG2288, CEG8205A, CEG8208, CEH2288, CEH2310, CEH2316, CEH2609
Keywords - CEE02N6A MOSFET specs
CEE02N6A cross reference
CEE02N6A equivalent finder
CEE02N6A pdf lookup
CEE02N6A substitution
CEE02N6A replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
