All MOSFET. CEE02N6A Datasheet

 

CEE02N6A Datasheet and Replacement


   Type Designator: CEE02N6A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: TO126
 

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CEE02N6A Datasheet (PDF)

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CEE02N6A

CEE02N6AN-Channel Enhancement Mode Field Effect TransistorFEATURES600V, 1.3A, RDS(ON) = 8.5 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-126 package.GGDSCEE SERIESTO-126SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsD

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CEE02N6A

CEE02N6GN-Channel Enhancement Mode Field Effect TransistorFEATURES600V, 2.0A, RDS(ON) = 5.0 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-126 package.GCEE SERIESTO-126SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Sour

Datasheet: CED83A3 , CED83A3G , CED840A , CED84A4 , CED85A3 , CED93A3 , CEDF634 , CEDF640 , IRF9540 , CEE02N6G , CEG2288 , CEG8205A , CEG8208 , CEH2288 , CEH2310 , CEH2316 , CEH2609 .

History: SLF10N65A | RJK5030DPP-M0 | IRF7907PBF | PA004EM | HFS2N60S | AP4N2R6P | GN10N65A4

Keywords - CEE02N6A MOSFET datasheet

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