All MOSFET. CEE02N6A Datasheet

 

CEE02N6A MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEE02N6A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: TO126

 CEE02N6A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEE02N6A Datasheet (PDF)

 ..1. Size:455K  cet
 cee02n6a.pdf

CEE02N6A CEE02N6A

CEE02N6AN-Channel Enhancement Mode Field Effect TransistorFEATURES600V, 1.3A, RDS(ON) = 8.5 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-126 package.GGDSCEE SERIESTO-126SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsD

 7.1. Size:456K  cet
 cee02n6g.pdf

CEE02N6A CEE02N6A

CEE02N6GN-Channel Enhancement Mode Field Effect TransistorFEATURES600V, 2.0A, RDS(ON) = 5.0 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-126 package.GCEE SERIESTO-126SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Sour

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SM2F07NSU

 

 
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