CEE02N6G Specs and Replacement
Type Designator: CEE02N6G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO126
CEE02N6G substitution
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CEE02N6G datasheet
cee02n6g.pdf
CEE02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 2.0A, RDS(ON) = 5.0 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-126 package. G CEE SERIES TO-126 S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Sour... See More ⇒
cee02n6a.pdf
CEE02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1.3A, RDS(ON) = 8.5 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-126 package. G G D S CEE SERIES TO-126 S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units D... See More ⇒
Detailed specifications: CED83A3G, CED840A, CED84A4, CED85A3, CED93A3, CEDF634, CEDF640, CEE02N6A, P55NF06, CEG2288, CEG8205A, CEG8208, CEH2288, CEH2310, CEH2316, CEH2609, CEK01N65
Keywords - CEE02N6G MOSFET specs
CEE02N6G cross reference
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CEE02N6G replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
