All MOSFET. CEE02N6G Datasheet

 

CEE02N6G Datasheet and Replacement


   Type Designator: CEE02N6G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO126
 

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CEE02N6G Datasheet (PDF)

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CEE02N6G

CEE02N6GN-Channel Enhancement Mode Field Effect TransistorFEATURES600V, 2.0A, RDS(ON) = 5.0 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-126 package.GCEE SERIESTO-126SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Sour

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CEE02N6G

CEE02N6AN-Channel Enhancement Mode Field Effect TransistorFEATURES600V, 1.3A, RDS(ON) = 8.5 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-126 package.GGDSCEE SERIESTO-126SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsD

Datasheet: CED83A3G , CED840A , CED84A4 , CED85A3 , CED93A3 , CEDF634 , CEDF640 , CEE02N6A , IRFB4115 , CEG2288 , CEG8205A , CEG8208 , CEH2288 , CEH2310 , CEH2316 , CEH2609 , CEK01N65 .

History: NTMFS4744NT1G | BLP04N10-B | RQA0008NXAQS | AM2394NE | IPC50N04S5L-5R5 | S-LNTK2575LT1G | QM3002AS

Keywords - CEE02N6G MOSFET datasheet

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