All MOSFET. CEG2288 Datasheet

 

CEG2288 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEG2288
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 6.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.2 nC
   trⓘ - Rise Time: 3.8 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TSSOP8

 CEG2288 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEG2288 Datasheet (PDF)

 ..1. Size:572K  cet
 ceg2288.pdf

CEG2288 CEG2288

CEG2288Dual N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 6.2A, RDS(ON) = 24m @VGS = 4.5V. RDS(ON) = 34m @VGS = 2.5V.Super High dense cell design for extremely low RDS(ON).High power and current handing capability.D 1 8 DLead free product is acquired.2 7 S2S1TSSOP-8 Package.S1 3 6 S24G1 5 G2G2S2S2G1DS1S1DTSSOP-8ABSOLUTE MAXI

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: BUZ901D

 

 
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