All MOSFET. CEG2288 Datasheet

 

CEG2288 Datasheet and Replacement


   Type Designator: CEG2288
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.8 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TSSOP8
 

 CEG2288 substitution

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CEG2288 Datasheet (PDF)

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CEG2288

CEG2288Dual N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 6.2A, RDS(ON) = 24m @VGS = 4.5V. RDS(ON) = 34m @VGS = 2.5V.Super High dense cell design for extremely low RDS(ON).High power and current handing capability.D 1 8 DLead free product is acquired.2 7 S2S1TSSOP-8 Package.S1 3 6 S24G1 5 G2G2S2S2G1DS1S1DTSSOP-8ABSOLUTE MAXI

Datasheet: CED840A , CED84A4 , CED85A3 , CED93A3 , CEDF634 , CEDF640 , CEE02N6A , CEE02N6G , 8205A , CEG8205A , CEG8208 , CEH2288 , CEH2310 , CEH2316 , CEH2609 , CEK01N65 , CEK01N65A .

History: CEH2288 | IRHMB57Z60 | SQJ431EP

Keywords - CEG2288 MOSFET datasheet

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