CEG2288 Specs and Replacement
Type Designator: CEG2288
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.8 nS
Cossⓘ - Output Capacitance: 125 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: TSSOP8
CEG2288 substitution
- MOSFET ⓘ Cross-Reference Search
CEG2288 datasheet
ceg2288.pdf
CEG2288 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.2A, RDS(ON) = 24m @VGS = 4.5V. RDS(ON) = 34m @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. D 1 8 D Lead free product is acquired. 2 7 S2 S1 TSSOP-8 Package. S1 3 6 S2 4 G1 5 G2 G2 S2 S2 G1 D S1 S1 D TSSOP-8 ABSOLUTE MAXI... See More ⇒
Detailed specifications: CED840A, CED84A4, CED85A3, CED93A3, CEDF634, CEDF640, CEE02N6A, CEE02N6G, 8205A, CEG8205A, CEG8208, CEH2288, CEH2310, CEH2316, CEH2609, CEK01N65, CEK01N65A
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
