CEH2288 Specs and Replacement

Type Designator: CEH2288

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.8 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: TSOP6

CEH2288 substitution

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CEH2288 datasheet

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CEH2288

CEH2288 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 5.2A , RDS(ON) = 26m @VGS = 4.5V. RDS(ON) = 35m @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. D2(5) D1(2) TSOP-6 package. 4 5 6 G1(6) G2(4) 3 2 1 S1(1) S2(3) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Param... See More ⇒

Detailed specifications: CED93A3, CEDF634, CEDF640, CEE02N6A, CEE02N6G, CEG2288, CEG8205A, CEG8208, IRF630, CEH2310, CEH2316, CEH2609, CEK01N65, CEK01N65A, CEK01N6G, CEK01N7, CEK7002A

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.