All MOSFET. CEH2288 Datasheet

 

CEH2288 Datasheet and Replacement


   Type Designator: CEH2288
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.8 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: TSOP6
 

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CEH2288 Datasheet (PDF)

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CEH2288

CEH2288N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 5.2A , RDS(ON) = 26m @VGS = 4.5V. RDS(ON) = 35m @VGS = 2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.Lead free product is acquired.D2(5)D1(2)TSOP-6 package.456G1(6) G2(4)321 S1(1) S2(3)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParam

Datasheet: CED93A3 , CEDF634 , CEDF640 , CEE02N6A , CEE02N6G , CEG2288 , CEG8205A , CEG8208 , 7N65 , CEH2310 , CEH2316 , CEH2609 , CEK01N65 , CEK01N65A , CEK01N6G , CEK01N7 , CEK7002A .

History: FDP8443 | IPB65R190E6

Keywords - CEH2288 MOSFET datasheet

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