All MOSFET. CEH2288 Datasheet

 

CEH2288 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEH2288
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.2 nC
   trⓘ - Rise Time: 3.8 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: TSOP6

 CEH2288 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEH2288 Datasheet (PDF)

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 ceh2288.pdf

CEH2288 CEH2288

CEH2288N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 5.2A , RDS(ON) = 26m @VGS = 4.5V. RDS(ON) = 35m @VGS = 2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.Lead free product is acquired.D2(5)D1(2)TSOP-6 package.456G1(6) G2(4)321 S1(1) S2(3)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParam

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FMV20N50ES | CST08N50F | BRF5N65 | 2SJ325-Z | ZVN2110A | TK70J20D | PPMT30V3

 

 
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