CEH2609 Specs and Replacement
Type Designator: CEH2609
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3.5(2.5) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6(8) nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06(0.1) Ohm
Package: TSOP6
CEH2609 substitution
- MOSFET ⓘ Cross-Reference Search
CEH2609 datasheet
ceh2609.pdf
CEH2609 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 20V, 3.5A, RDS(ON) = 60m @VGS = 4.5V. RDS(ON) = 80m @VGS = 2.5V. -20V, -2.5A, RDS(ON) = 100m @VGS = -4.5V. RDS(ON) = 145m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). D2(4) D1(6) High power and current handing capability. Lead free product is acquired. 4 Surface m... See More ⇒
Detailed specifications: CEE02N6A, CEE02N6G, CEG2288, CEG8205A, CEG8208, CEH2288, CEH2310, CEH2316, 2SK3878, CEK01N65, CEK01N65A, CEK01N6G, CEK01N7, CEK7002A, CEM0215, CEM0310, CEM0410
Keywords - CEH2609 MOSFET specs
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