All MOSFET. CEH2609 Datasheet

 

CEH2609 Datasheet and Replacement


   Type Designator: CEH2609
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 3.5(2.5) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6(8) nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06(0.1) Ohm
   Package: TSOP6
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CEH2609 Datasheet (PDF)

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CEH2609

CEH2609Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURES20V, 3.5A, RDS(ON) = 60m @VGS = 4.5V. RDS(ON) = 80m @VGS = 2.5V.-20V, -2.5A, RDS(ON) = 100m @VGS = -4.5V. RDS(ON) = 145m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).D2(4)D1(6)High power and current handing capability.Lead free product is acquired.4Surface m

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History: AP4563AGH | 5N65KG-TF1-T | AP4N2R6MT | AP4575GM-HF | AP4820GYT-HF | AP60SL280AIN | STW28NM60ND

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