All MOSFET. CEK7002A Datasheet

 

CEK7002A Datasheet and Replacement


   Type Designator: CEK7002A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.3 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: TO92
 

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CEK7002A Datasheet (PDF)

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CEK7002A

CEK7002AN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES60V, 0.3A, RDS(ON) = 6 @VGS = 10V. RDS(ON) = 6 @VGS = 5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.TO-92 package.GGDSTO-92SABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Sou

Datasheet: CEH2288 , CEH2310 , CEH2316 , CEH2609 , CEK01N65 , CEK01N65A , CEK01N6G , CEK01N7 , 5N60 , CEM0215 , CEM0310 , CEM0410 , CEM0415 , CEM1010 , CEM2182 , CEM2539A , CEM26138 .

History: PP4B10BS | 14N50L-TA3-T | 14N50G-TF1-T | CEM6428 | CEN2321A | BRCS120P012MC | IXFT23N80Q

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