All MOSFET. CEM0215 Datasheet

 

CEM0215 Datasheet and Replacement


   Type Designator: CEM0215
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm
   Package: SO8
 

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CEM0215 Datasheet (PDF)

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CEM0215

CEM0215PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURES150V, 2A, RDS(ON) = 440m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.D D D D8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter

Datasheet: CEH2310 , CEH2316 , CEH2609 , CEK01N65 , CEK01N65A , CEK01N6G , CEK01N7 , CEK7002A , IRFP260 , CEM0310 , CEM0410 , CEM0415 , CEM1010 , CEM2182 , CEM2539A , CEM26138 , CEM2939 .

History: IPI14N03LA | PMN34UN | PD0903BV

Keywords - CEM0215 MOSFET datasheet

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