All MOSFET. CEM0310 Datasheet

 

CEM0310 Datasheet and Replacement


   Type Designator: CEM0310
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 84 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: SO8
 

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CEM0310 Datasheet (PDF)

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CEM0310

CEM0310Single N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 2.6A, RDS(ON) = 180m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.D D D DSurface mount Package.8 7 6 5SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symb

Datasheet: CEH2316 , CEH2609 , CEK01N65 , CEK01N65A , CEK01N6G , CEK01N7 , CEK7002A , CEM0215 , SPP20N60C3 , CEM0410 , CEM0415 , CEM1010 , CEM2182 , CEM2539A , CEM26138 , CEM2939 , CEM3032 .

History: BRCS030N10SHRA | 14N50L-TA3-T | 14N50G-TF1-T | IXFT68N20 | CEN2321A | BRCS120P012MC | IXFT23N80Q

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