CEM0310 Specs and Replacement
Type Designator: CEM0310
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 84 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: SO8
CEM0310 substitution
- MOSFET ⓘ Cross-Reference Search
CEM0310 datasheet
cem0310.pdf
CEM0310 Single N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 2.6A, RDS(ON) = 180m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D D D Surface mount Package. 8 7 6 5 SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symb... See More ⇒
Detailed specifications: CEH2316, CEH2609, CEK01N65, CEK01N65A, CEK01N6G, CEK01N7, CEK7002A, CEM0215, K3569, CEM0410, CEM0415, CEM1010, CEM2182, CEM2539A, CEM26138, CEM2939, CEM3032
Keywords - CEM0310 MOSFET specs
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