All MOSFET. CEM0310 Datasheet

 

CEM0310 Datasheet and Replacement


   Type Designator: CEM0310
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 84 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: SO8
 

 CEM0310 substitution

   - MOSFET ⓘ Cross-Reference Search

 

CEM0310 Datasheet (PDF)

 ..1. Size:746K  cet
 cem0310.pdf pdf_icon

CEM0310

CEM0310Single N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 2.6A, RDS(ON) = 180m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.D D D DSurface mount Package.8 7 6 5SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symb

Datasheet: CEH2316 , CEH2609 , CEK01N65 , CEK01N65A , CEK01N6G , CEK01N7 , CEK7002A , CEM0215 , SPP20N60C3 , CEM0410 , CEM0415 , CEM1010 , CEM2182 , CEM2539A , CEM26138 , CEM2939 , CEM3032 .

History: FDP8443 | IPB65R190E6

Keywords - CEM0310 MOSFET datasheet

 CEM0310 cross reference
 CEM0310 equivalent finder
 CEM0310 lookup
 CEM0310 substitution
 CEM0310 replacement

 

 
Back to Top

 


 
.