CEM0410 Specs and Replacement
Type Designator: CEM0410
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: SO8
CEM0410 substitution
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CEM0410 datasheet
cem0410.pdf
CEM0410 Single N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 3.4A, RDS(ON) = 120m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D D D Surface mount Package. 8 7 6 5 SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Pa... See More ⇒
cem0415.pdf
CEM0415 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V, 4A, RDS(ON) = 85m @VGS = 10V. RDS(ON) = 95m @VGS = 6V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 ... See More ⇒
Detailed specifications: CEH2609, CEK01N65, CEK01N65A, CEK01N6G, CEK01N7, CEK7002A, CEM0215, CEM0310, IRFP260, CEM0415, CEM1010, CEM2182, CEM2539A, CEM26138, CEM2939, CEM3032, CEM3060
Keywords - CEM0410 MOSFET specs
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