All MOSFET. CEM0410 Datasheet

 

CEM0410 Datasheet and Replacement


   Type Designator: CEM0410
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SO8
 

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CEM0410 Datasheet (PDF)

 ..1. Size:737K  cet
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CEM0410

CEM0410Single N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES100V, 3.4A, RDS(ON) = 120m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.D D D DSurface mount Package.8 7 6 5SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedPa

 8.1. Size:402K  cet
 cem0415.pdf pdf_icon

CEM0410

CEM0415PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURES150V, 4A, RDS(ON) = 85m @VGS = 10V. RDS(ON) = 95m @VGS = 6V. Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25

Datasheet: CEH2609 , CEK01N65 , CEK01N65A , CEK01N6G , CEK01N7 , CEK7002A , CEM0215 , CEM0310 , 8205A , CEM0415 , CEM1010 , CEM2182 , CEM2539A , CEM26138 , CEM2939 , CEM3032 , CEM3060 .

History: HAT2153R | APT50M75JLL | 2SK1316S | NCEPB303GU | FDZ7064AS | BRCS100N10SHZC | FDZ4670S

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