All MOSFET. CEM0410 Datasheet

 

CEM0410 Datasheet and Replacement


   Type Designator: CEM0410
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SO8
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CEM0410 Datasheet (PDF)

 ..1. Size:737K  cet
 cem0410.pdf pdf_icon

CEM0410

CEM0410Single N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES100V, 3.4A, RDS(ON) = 120m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.D D D DSurface mount Package.8 7 6 5SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedPa

 8.1. Size:402K  cet
 cem0415.pdf pdf_icon

CEM0410

CEM0415PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURES150V, 4A, RDS(ON) = 85m @VGS = 10V. RDS(ON) = 95m @VGS = 6V. Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: STW20NB50 | AP4924GM | AP4N2R6P | CEG8205A | AP4578GM-HF | CEN2321A

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