All MOSFET. CEM26138 Datasheet

 

CEM26138 Datasheet and Replacement


   Type Designator: CEM26138
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30(20) V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20(12) V
   |Id| ⓘ - Maximum Drain Current: 7.6(6) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4(7) nS
   Cossⓘ - Output Capacitance: 125(130) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022(0.027) Ohm
   Package: SO8
 

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CEM26138 Datasheet (PDF)

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CEM26138

CEM26138Dual N-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES30V, 7.6A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 33m @VGS = 4.5V.20V, 6A, RDS(ON) = 27m @VGS = 4.5V. RDS(ON) = 40m @VGS = 2.5V.D1 D1 D2 D2Super high dense cell design for extremely low RDS(ON).8 7 6 5High power and current handing capability.Lead-free plating ; RoHS compliant.Su

Datasheet: CEK7002A , CEM0215 , CEM0310 , CEM0410 , CEM0415 , CEM1010 , CEM2182 , CEM2539A , TK10A60D , CEM2939 , CEM3032 , CEM3060 , CEM3109 , CEM3120 , CEA3252 , CEB10N65 , CEB12N65 .

History: SGSP364 | DATD063N06N | IXTY1N120P | DKI06186 | 2SK3324 | SRC60R017FBT4G | HM30N10

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