CEM26138 Specs and Replacement
Type Designator: CEM26138
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30(20) V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20(12) V
|Id| ⓘ - Maximum Drain Current: 7.6(6) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4(7) nS
Cossⓘ - Output Capacitance: 125(130) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022(0.027) Ohm
Package: SO8
CEM26138 substitution
CEM26138 datasheet
cem26138.pdf
CEM26138 Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 7.6A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 33m @VGS = 4.5V. 20V, 6A, RDS(ON) = 27m @VGS = 4.5V. RDS(ON) = 40m @VGS = 2.5V. D1 D1 D2 D2 Super high dense cell design for extremely low RDS(ON). 8 7 6 5 High power and current handing capability. Lead-free plating ; RoHS compliant. Su... See More ⇒
Detailed specifications: CEK7002A , CEM0215 , CEM0310 , CEM0410 , CEM0415 , CEM1010 , CEM2182 , CEM2539A , 13N50 , CEM2939 , CEM3032 , CEM3060 , CEM3109 , CEM3120 , CEA3252 , CEB10N65 , CEB12N65 .
History: PD618BA
Keywords - CEM26138 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
