CEA3252 Specs and Replacement
Type Designator: CEA3252
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 145 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: SOT89
CEA3252 substitution
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CEA3252 datasheet
cea3252.pdf
CEA3252 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 5A, RDS(ON) = 32m @VGS = 10V. RDS(ON) = 45m @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-89 package. G D S D G SOT-89 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Dra... See More ⇒
cea3252.pdf
CEA3252 www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.030 at VGS = 10 V 8.0 TrenchFET Power MOSFETs 60 0.036 at VGS = 4.5 V 6.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D D G S G D S N-Channel MOSFET ABSOLUTE MAX... See More ⇒
Detailed specifications: CEM2182, CEM2539A, CEM26138, CEM2939, CEM3032, CEM3060, CEM3109, CEM3120, AON6380, CEB10N65, CEB12N65, CEC8218, CEF05N6, CEF10N65, CEF12N65, CEH8205, CEM2539
Keywords - CEA3252 MOSFET specs
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