All MOSFET. CEA3252 Datasheet

 

CEA3252 Datasheet and Replacement


   Type Designator: CEA3252
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: SOT89
 

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CEA3252 Datasheet (PDF)

 ..1. Size:133K  cet
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CEA3252

CEA3252N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V, 5A, RDS(ON) = 32m @VGS = 10V. RDS(ON) = 45m @VGS = 4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-89 package.GDSDGSOT-89SABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDra

 ..2. Size:868K  cn vbsemi
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CEA3252

CEA3252www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.030 at VGS = 10 V 8.0 TrenchFET Power MOSFETs600.036 at VGS = 4.5 V 6.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDDGSG D S N-Channel MOSFET ABSOLUTE MAX

Datasheet: CEM2182 , CEM2539A , CEM26138 , CEM2939 , CEM3032 , CEM3060 , CEM3109 , CEM3120 , AON7506 , CEB10N65 , CEB12N65 , CEC8218 , CEF05N6 , CEF10N65 , CEF12N65 , CEH8205 , CEM2539 .

History: NCEP016N60VD

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