CEC8218 Specs and Replacement

Type Designator: CEC8218

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 860 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: DFN3*3

CEC8218 substitution

- MOSFET ⓘ Cross-Reference Search

 

CEC8218 datasheet

 ..1. Size:433K  cet
 cec8218.pdf pdf_icon

CEC8218

CEC8218 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES D D 20V, 6.5A, RDS(ON) = 23m @VGS = 4.5V. RDS(ON) = 34m @VGS = 2.5V. *1K *1K Super High dense cell design for extremely low RDS(ON). G1 G2 High power and current handing capability. Lead free product is acquired. S1 S2 *Typical value by design D D D D D 8 7 6 5 Bottom View 1 2 3 4 DFN3*3 S1 G1 S2 ... See More ⇒

Detailed specifications: CEM2939, CEM3032, CEM3060, CEM3109, CEM3120, CEA3252, CEB10N65, CEB12N65, NCEP15T14, CEF05N6, CEF10N65, CEF12N65, CEH8205, CEM2539, CEM73A3G, CEZ3R03, CEM7808

Keywords - CEC8218 MOSFET specs

 CEC8218 cross reference

 CEC8218 equivalent finder

 CEC8218 pdf lookup

 CEC8218 substitution

 CEC8218 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.