All MOSFET. CEC8218 Datasheet

 

CEC8218 Datasheet and Replacement


   Type Designator: CEC8218
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 860 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: DFN3*3
 

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CEC8218 Datasheet (PDF)

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CEC8218

CEC8218Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESD D20V, 6.5A, RDS(ON) = 23m @VGS = 4.5V. RDS(ON) = 34m @VGS = 2.5V.*1K *1KSuper High dense cell design for extremely low RDS(ON).G1 G2High power and current handing capability.Lead free product is acquired.S1 S2*Typical value by designDD D D D8 7 6 5Bottom View1 2 3 4DFN3*3S1 G1 S2

Datasheet: CEM2939 , CEM3032 , CEM3060 , CEM3109 , CEM3120 , CEA3252 , CEB10N65 , CEB12N65 , NCEP15T14 , CEF05N6 , CEF10N65 , CEF12N65 , CEH8205 , CEM2539 , CEM73A3G , CEZ3R03 , CEM7808 .

History: AONR36368

Keywords - CEC8218 MOSFET datasheet

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