CEF05N6 Datasheet and Replacement
Type Designator: CEF05N6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO220F
CEF05N6 substitution
CEF05N6 Datasheet (PDF)
cef05n6.pdf
CEF05N6PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURES650V, 5A, RDS(ON) = 2.4 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220F full-pak for through hole.GCEF SERIESSTO-220FABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbo
cep05n65 ceb05n65 cef05n65.pdf
CEP05N65/CEB05N65CEF05N65N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP05N65 650V 2.4 4.5A 10VCEB05N65 650V 2.4 4.5A 10VCEF05N65 650V 2.4 4.5A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SERIESTO
ceb05n8 cef05n8 cep05n8.pdf
CEP05N8/CEB05N8CEF05N8N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP05N8 800V 2.9 4.4A 10VCEB05N8 800V 2.9 4.4A 10VCEF05N8 800V 2.9 4.4A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF S
Datasheet: CEM3032 , CEM3060 , CEM3109 , CEM3120 , CEA3252 , CEB10N65 , CEB12N65 , CEC8218 , AON7506 , CEF10N65 , CEF12N65 , CEH8205 , CEM2539 , CEM73A3G , CEZ3R03 , CEM7808 , CEP10N65 .
History: AONR36368
Keywords - CEF05N6 MOSFET datasheet
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: AONR36368
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