CEF05N6 Datasheet and Replacement. Cross Reference Search

CEF05N6 Datasheet (PDF)

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CEF05N6PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURES650V, 5A, RDS(ON) = 2.4 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220F full-pak for through hole.GCEF SERIESSTO-220FABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbo

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CEP05N65/CEB05N65CEF05N65N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP05N65 650V 2.4 4.5A 10VCEB05N65 650V 2.4 4.5A 10VCEF05N65 650V 2.4 4.5A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SERIESTO

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CEP05N8/CEB05N8CEF05N8N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP05N8 800V 2.9 4.4A 10VCEB05N8 800V 2.9 4.4A 10VCEF05N8 800V 2.9 4.4A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF S

Datasheet: CEM3032 , CEM3060 , CEM3109 , CEM3120 , CEA3252 , CEB10N65 , CEB12N65 , CEC8218 , IRFP250 , CEF10N65 , CEF12N65 , CEH8205 , CEM2539 , CEM73A3G , CEZ3R03 , CEM7808 , CEP10N65 .