CEM2539 Specs and Replacement
Type Designator: CEM2539
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7.5(4) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 870(9) nS
Cossⓘ - Output Capacitance: 230 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SO8
CEM2539 substitution
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CEM2539 datasheet
cem2539.pdf
CEM2539 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES D1 D2 5 20V, 7.5A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 24m @VGS = 4.5V. *1K G1 G2 RDS(ON) = 33m @VGS = 2.5V. -20V, -4.0A, RDS(ON) = 80m @VGS = -10V. RDS(ON) = 100m @VGS = -4.5V. S1 S2 RDS(ON) = 150m @VGS = -2.5V. D1 D1 D2 D2 8 7 6 5 Super high dense cell design for extremely lo... See More ⇒
cem2539a.pdf
CEM2539A Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES D1 D2 5 20V, 7.5A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 25m @VGS = 4.5V. G1 G2 RDS(ON) = 40m @VGS = 2.5V. -20V, -4A, RDS(ON) = 80m @VGS = -10V. RDS(ON) = 100m @VGS = -4.5V. S1 S2 RDS(ON) = 150m @VGS = -2.5V. D1 D1 D2 D2 8 7 6 5 Super high dense cell design for extremely low RDS(... See More ⇒
Detailed specifications: CEA3252, CEB10N65, CEB12N65, CEC8218, CEF05N6, CEF10N65, CEF12N65, CEH8205, AO4407, CEM73A3G, CEZ3R03, CEM7808, CEP10N65, CEP12N65, CES2336, CEM3128, CEM3138
Keywords - CEM2539 MOSFET specs
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