All MOSFET. CEM2539 Datasheet

 

CEM2539 Datasheet and Replacement


   Type Designator: CEM2539
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7.5(4) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 870(9) nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SO8
 

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CEM2539 Datasheet (PDF)

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CEM2539

CEM2539Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURESD1 D2520V, 7.5A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 24m @VGS = 4.5V.*1KG1 G2 RDS(ON) = 33m @VGS = 2.5V.-20V, -4.0A, RDS(ON) = 80m @VGS = -10V. RDS(ON) = 100m @VGS = -4.5V.S1 S2 RDS(ON) = 150m @VGS = -2.5V.D1 D1 D2 D28 7 6 5Super high dense cell design for extremely lo

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CEM2539

CEM2539ADual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURESD1 D2520V, 7.5A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 25m @VGS = 4.5V.G1 G2 RDS(ON) = 40m @VGS = 2.5V.-20V, -4A, RDS(ON) = 80m @VGS = -10V. RDS(ON) = 100m @VGS = -4.5V.S1 S2 RDS(ON) = 150m @VGS = -2.5V.D1 D1 D2 D28 7 6 5Super high dense cell design for extremely low RDS(

Datasheet: CEA3252 , CEB10N65 , CEB12N65 , CEC8218 , CEF05N6 , CEF10N65 , CEF12N65 , CEH8205 , P60NF06 , CEM73A3G , CEZ3R03 , CEM7808 , CEP10N65 , CEP12N65 , CES2336 , CEM3128 , CEM3138 .

History: APT3580BN | RSR030N06

Keywords - CEM2539 MOSFET datasheet

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