CEM6426 Datasheet and Replacement
Type Designator: CEM6426
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.066 Ohm
Package: SO8
CEM6426 substitution
CEM6426 Datasheet (PDF)
cem6426.pdf
CEM6426N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 4.7A, RDS(ON) = 66m @VGS = 10V. RDS(ON) = 85m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwis
cem6428.pdf
CEM6428Dual N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 4.1A, RDS(ON) = 68m @VGS = 10V. RDS(ON) = 86m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 4S1 G1 S2 G21ABSOLUTE MAXIMUM RATINGS TA = 25 C unl
Datasheet: CEM4308 , CEM6056 , CEM6086 , CEM6086L , CEM6088 , CEM6088L , CEM6186 , CEM6188 , MMD60R360PRH , CEM6428 , CEM6600 , CEM6608 , CEM6659 , CEM7350 , CEM7350L , CEM8208 , CEM8809 .
History: IPA60R165CP | VBE1606 | NTMFS4934NT1G | JMSL0615APD | AOD1R4A70 | AM4502C | FMR17N60ES
Keywords - CEM6426 MOSFET datasheet
CEM6426 cross reference
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History: IPA60R165CP | VBE1606 | NTMFS4934NT1G | JMSL0615APD | AOD1R4A70 | AM4502C | FMR17N60ES
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