All MOSFET. CEM8208 Datasheet

 

CEM8208 Datasheet and Replacement


   Type Designator: CEM8208
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 680 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SO8
 

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CEM8208 Datasheet (PDF)

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CEM8208

CEM8208Dual N-Channel Enhancement Mode Field Effect TransistorFEATURES520V, 7A, RDS(ON) = 22m @VGS = 4.5V. RDS(ON) = 32m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package. ESD Protected: 2000 VSO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAX

Datasheet: CEM6188 , CEM6426 , CEM6428 , CEM6600 , CEM6608 , CEM6659 , CEM7350 , CEM7350L , HY1906P , CEM8809 , CEM8958 , CEM8958A , CEM8968 , CEM9436A , CEM9926A , CEM9935A , CEM9936A .

History: HY5208A | SIHFP140 | 2SK2689-01MR | GP2M011A090NG | 2SK3634-Z | TWS6604FL | AP10TN008CMT

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