CEM8208 Specs and Replacement
Type Designator: CEM8208
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 680 nS
Cossⓘ - Output Capacitance: 115 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SO8
CEM8208 substitution
- MOSFET ⓘ Cross-Reference Search
CEM8208 datasheet
cem8208.pdf
CEM8208 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V, 7A, RDS(ON) = 22m @VGS = 4.5V. RDS(ON) = 32m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. ESD Protected 2000 V SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAX... See More ⇒
Detailed specifications: CEM6188, CEM6426, CEM6428, CEM6600, CEM6608, CEM6659, CEM7350, CEM7350L, AOD4184A, CEM8809, CEM8958, CEM8958A, CEM8968, CEM9436A, CEM9926A, CEM9935A, CEM9936A
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