All MOSFET. CEM8208 Datasheet

 

CEM8208 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEM8208
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.2 nC
   trⓘ - Rise Time: 680 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SO8

 CEM8208 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEM8208 Datasheet (PDF)

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 cem8208.pdf

CEM8208 CEM8208

CEM8208Dual N-Channel Enhancement Mode Field Effect TransistorFEATURES520V, 7A, RDS(ON) = 22m @VGS = 4.5V. RDS(ON) = 32m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package. ESD Protected: 2000 VSO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAX

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