CEM8809 Specs and Replacement

Type Designator: CEM8809

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: SO8

CEM8809 substitution

- MOSFET ⓘ Cross-Reference Search

 

CEM8809 datasheet

 ..1. Size:571K  cet
 cem8809.pdf pdf_icon

CEM8809

CEM8809 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 16A, RDS(ON) = 6 m @VGS = 10V. RDS(ON) = 7.5 m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwi... See More ⇒

Detailed specifications: CEM6426, CEM6428, CEM6600, CEM6608, CEM6659, CEM7350, CEM7350L, CEM8208, AO4407A, CEM8958, CEM8958A, CEM8968, CEM9436A, CEM9926A, CEM9935A, CEM9936A, CEN7002A

Keywords - CEM8809 MOSFET specs

 CEM8809 cross reference

 CEM8809 equivalent finder

 CEM8809 pdf lookup

 CEM8809 substitution

 CEM8809 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.