All MOSFET. CEM8809 Datasheet

 

CEM8809 Datasheet and Replacement


   Type Designator: CEM8809
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: SO8
 

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CEM8809 Datasheet (PDF)

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CEM8809

CEM8809N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 16A, RDS(ON) = 6 m @VGS = 10V. RDS(ON) = 7.5 m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwi

Datasheet: CEM6426 , CEM6428 , CEM6600 , CEM6608 , CEM6659 , CEM7350 , CEM7350L , CEM8208 , AO3407 , CEM8958 , CEM8958A , CEM8968 , CEM9436A , CEM9926A , CEM9935A , CEM9936A , CEN7002A .

History: CRTS084NE6N | TSM3457CX6 | BRCS200N03YN | CJCD2003

Keywords - CEM8809 MOSFET datasheet

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