All MOSFET. CET0215 Datasheet

 

CET0215 Datasheet and Replacement


   Type Designator: CET0215
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm
   Package: SOT223
 

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CET0215 Datasheet (PDF)

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CET0215

CET0215N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES150V, 2A, RDS(ON) = 440m @VGS = 10V.RDS(ON) = 580m @VGS = 6V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead-free plating ; RoHS compliant.SOT-223 package.GDSDGSOT-223SABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit Uni

Datasheet: CES2310 , CES2312 , CES2314 , CES2316 , CES2320 , CES2324 , CES2342 , CES2362 , 10N60 , CET04N10 , CET3055L , CET3252 , CET6426 , CEU4269 , CEU4279 , CEV2306 , CEA6861 .

History: FQP65N06 | DMB53D0UV

Keywords - CET0215 MOSFET datasheet

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