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CET0215 PDF Specs and Replacement


   Type Designator: CET0215
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm
   Package: SOT223
 

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CET0215 PDF Specs

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CET0215

CET0215 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 150V, 2A, RDS(ON) = 440m @VGS = 10V. RDS(ON) = 580m @VGS = 6V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead-free plating ; RoHS compliant. SOT-223 package. G D S D G SOT-223 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Uni... See More ⇒

Detailed specifications: CES2310 , CES2312 , CES2314 , CES2316 , CES2320 , CES2324 , CES2342 , CES2362 , IRFP260N , CET04N10 , CET3055L , CET3252 , CET6426 , CEU4269 , CEU4279 , CEV2306 , CEA6861 .

Keywords - CET0215 MOSFET specs

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