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CET04N10 Specs and Replacement


   Type Designator: CET04N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: SOT223
 

 CET04N10 substitution

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CET04N10 Specs

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CET04N10

CET04N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 3A, RDS(ON) = 200m @VGS = 10V. RDS(ON) = 280m @VGS = 6V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-223 package. G D S D G SOT-223 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source... See More ⇒

Detailed specifications: CES2312 , CES2314 , CES2316 , CES2320 , CES2324 , CES2342 , CES2362 , CET0215 , AO3400 , CET3055L , CET3252 , CET6426 , CEU4269 , CEU4279 , CEV2306 , CEA6861 , CEB05P03 .

History: 2N7000P

Keywords - CET04N10 MOSFET specs

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