CET04N10 Datasheet. Specs and Replacement

Type Designator: CET04N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: SOT223

  📄📄 Copy 

CET04N10 substitution

- MOSFET ⓘ Cross-Reference Search

 

CET04N10 datasheet

 ..1. Size:391K  cet
 cet04n10.pdf pdf_icon

CET04N10

CET04N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 3A, RDS(ON) = 200m @VGS = 10V. RDS(ON) = 280m @VGS = 6V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-223 package. G D S D G SOT-223 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source... See More ⇒

Detailed specifications: CES2312, CES2314, CES2316, CES2320, CES2324, CES2342, CES2362, CET0215, IRF640N, CET3055L, CET3252, CET6426, CEU4269, CEU4279, CEV2306, CEA6861, CEB05P03

Keywords - CET04N10 MOSFET specs

 CET04N10 cross reference

 CET04N10 equivalent finder

 CET04N10 pdf lookup

 CET04N10 substitution

 CET04N10 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.