CET3055L Specs and Replacement

Type Designator: CET3055L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: SOT223

CET3055L substitution

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CET3055L datasheet

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CET3055L

CET3055L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4A, RDS(ON) = 85m @VGS = 10V. RDS(ON) = 100m @VGS = 5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-223 package. G D S D G SOT-223 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source ... See More ⇒

Detailed specifications: CES2314, CES2316, CES2320, CES2324, CES2342, CES2362, CET0215, CET04N10, IRFB4227, CET3252, CET6426, CEU4269, CEU4279, CEV2306, CEA6861, CEB05P03, CEB12P10

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