All MOSFET. CET3055L Datasheet

 

CET3055L Datasheet and Replacement


   Type Designator: CET3055L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT223
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CET3055L Datasheet (PDF)

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CET3055L

CET3055LN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 4A, RDS(ON) = 85m @VGS = 10V. RDS(ON) = 100m @VGS = 5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-223 package.GDSDGSOT-223SABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source

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History: WMM11N80M3 | FDMS9620S | AM2314NE | RFP2N10L | IRFI7536G

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