CET3252 Specs and Replacement

Type Designator: CET3252

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: SOT223

CET3252 substitution

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CET3252 datasheet

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 cet3252.pdf pdf_icon

CET3252

CET3252 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 8A, RDS(ON) = 32m @VGS = 10V. RDS(ON) = 45m @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-223 package. G D S D G SOT-223 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units ... See More ⇒

Detailed specifications: CES2316, CES2320, CES2324, CES2342, CES2362, CET0215, CET04N10, CET3055L, IRF3710, CET6426, CEU4269, CEU4279, CEV2306, CEA6861, CEB05P03, CEB12P10, CEB14P20

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