All MOSFET. CEV2306 Datasheet

 

CEV2306 Datasheet and Replacement


   Type Designator: CEV2306
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOT323
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CEV2306 Datasheet (PDF)

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CEV2306

CEV2306N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES20V, 2A, RDS(ON) = 65m @VGS = 4.5V. RDS(ON) = 85m @VGS = 2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-323 package.DS GGSOT-323(SC-70)SABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit Unit

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History: FDMS9620S | IRFI7536G | WMM11N80M3

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