All MOSFET. CEV2306 Datasheet

 

CEV2306 Datasheet and Replacement


   Type Designator: CEV2306
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOT323
 

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CEV2306 Datasheet (PDF)

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CEV2306

CEV2306N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES20V, 2A, RDS(ON) = 65m @VGS = 4.5V. RDS(ON) = 85m @VGS = 2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-323 package.DS GGSOT-323(SC-70)SABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit Unit

Datasheet: CES2362 , CET0215 , CET04N10 , CET3055L , CET3252 , CET6426 , CEU4269 , CEU4279 , IRF9540 , CEA6861 , CEB05P03 , CEB12P10 , CEB14P20 , CEB15P15 , CEB20P06 , CEB20P10 , CEB30P03 .

History: HUFA75829D3S

Keywords - CEV2306 MOSFET datasheet

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