CEV2306 Specs and Replacement

Type Designator: CEV2306

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: SOT323

CEV2306 substitution

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CEV2306 datasheet

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 cev2306.pdf pdf_icon

CEV2306

CEV2306 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 2A, RDS(ON) = 65m @VGS = 4.5V. RDS(ON) = 85m @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-323 package. D S G G SOT-323(SC-70) S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Unit... See More ⇒

Detailed specifications: CES2362, CET0215, CET04N10, CET3055L, CET3252, CET6426, CEU4269, CEU4279, 2N7000, CEA6861, CEB05P03, CEB12P10, CEB14P20, CEB15P15, CEB20P06, CEB20P10, CEB30P03

Keywords - CEV2306 MOSFET specs

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