All MOSFET. CEA6861 Datasheet

 

CEA6861 Datasheet and Replacement


   Type Designator: CEA6861
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
   Package: SOT89
 

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CEA6861 Datasheet (PDF)

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CEA6861

CEA6861P-Channel Enhancement Mode Field Effect TransistorFEATURES-60V, -2.4A, RDS(ON) = 135m @VGS = -10V. RDS(ON) = 180m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-89 package.GDSDGSOT-89SABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-S

Datasheet: CET0215 , CET04N10 , CET3055L , CET3252 , CET6426 , CEU4269 , CEU4279 , CEV2306 , 2SK3878 , CEB05P03 , CEB12P10 , CEB14P20 , CEB15P15 , CEB20P06 , CEB20P10 , CEB30P03 , CEB35P10 .

History: FQA65N06 | STD20NF06L | IXFK140N30P | NCEP85T25 | FP3W90 | P06P03LDG | FQA5N90

Keywords - CEA6861 MOSFET datasheet

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