CEB20P06 Spec and Replacement
Type Designator: CEB20P06
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 4.5 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TO263
CEB20P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEB20P06 Specs
cep20p06 ceb20p06.pdf
CEP20P06/CEB20P06 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -14A, RDS(ON) =125m @VGS = -10V. RDS(ON) =175m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS T... See More ⇒
cep20p10 ceb20p10.pdf
CEP20P10/CEB20P10 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -100V, -20A, RDS(ON) =130m @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unles... See More ⇒
cep20a03 ceb20a03.pdf
CEP20A03/CEB20A03 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 197A, RDS(ON) = 2 m @VGS = 10V. RDS(ON) = 3 m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE... See More ⇒
Detailed specifications: CEU4269 , CEU4279 , CEV2306 , CEA6861 , CEB05P03 , CEB12P10 , CEB14P20 , CEB15P15 , IRF9540 , CEB20P10 , CEB30P03 , CEB35P10 , CEB50P03 , CEB6601 , CEB95P04 , CED05P03 , CED11P20 .
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