All MOSFET. CEB35P10 Datasheet

 

CEB35P10 Datasheet and Replacement


   Type Designator: CEB35P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 335 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm
   Package: TO263
 

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CEB35P10 Datasheet (PDF)

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CEB35P10

CEP35P10/CEB35P10CEF35P10P-Channel Enhancement Mode Field Effect TransistorFEATURES-100V, -32A, RDS(ON) =76m @VGS = -10V. RDS(ON) =92m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM

Datasheet: CEA6861 , CEB05P03 , CEB12P10 , CEB14P20 , CEB15P15 , CEB20P06 , CEB20P10 , CEB30P03 , 12N60 , CEB50P03 , CEB6601 , CEB95P04 , CED05P03 , CED11P20 , CED12P10 , CED20P06 , CED20P10 .

History: ZXMP3F37N8 | VBM1105 | RJK6013DPP-E0 | 2SK364 | CEM3407L | 2N6760JAN | SCH1337

Keywords - CEB35P10 MOSFET datasheet

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