CEB35P10 PDF and Equivalents Search

 

CEB35P10 Specs and Replacement

Type Designator: CEB35P10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 335 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm

Package: TO263

CEB35P10 substitution

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CEB35P10 datasheet

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 cep35p10 ceb35p10 cef35p10.pdf pdf_icon

CEB35P10

CEP35P10/CEB35P10 CEF35P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -32A, RDS(ON) =76m @VGS = -10V. RDS(ON) =92m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM... See More ⇒

Detailed specifications: CEA6861 , CEB05P03 , CEB12P10 , CEB14P20 , CEB15P15 , CEB20P06 , CEB20P10 , CEB30P03 , STP75NF75 , CEB50P03 , CEB6601 , CEB95P04 , CED05P03 , CED11P20 , CED12P10 , CED20P06 , CED20P10 .

Keywords - CEB35P10 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 


 
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