CEB35P10 Spec and Replacement
Type Designator: CEB35P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 335 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm
Package: TO263
CEB35P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEB35P10 Specs
cep35p10 ceb35p10 cef35p10.pdf
CEP35P10/CEB35P10 CEF35P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -32A, RDS(ON) =76m @VGS = -10V. RDS(ON) =92m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM... See More ⇒
Detailed specifications: CEA6861 , CEB05P03 , CEB12P10 , CEB14P20 , CEB15P15 , CEB20P06 , CEB20P10 , CEB30P03 , STP75NF75 , CEB50P03 , CEB6601 , CEB95P04 , CED05P03 , CED11P20 , CED12P10 , CED20P06 , CED20P10 .
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
