CEB35P10 MOSFET. Datasheet pdf. Equivalent
Type Designator: CEB35P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 32 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 74 nC
Rise Time (tr): 7 nS
Drain-Source Capacitance (Cd): 335 pF
Maximum Drain-Source On-State Resistance (Rds): 0.076 Ohm
Package: TO263
CEB35P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEB35P10 Datasheet (PDF)
1.1. cep35p10 ceb35p10 cef35p10.pdf 
Size:395K _cet
CEP35P10/CEB35P10 CEF35P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -32A, RDS(ON) =76m? @VGS = -10V. RDS(ON) =92m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATING
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
