All MOSFET. CEB6601 Datasheet

 

CEB6601 Datasheet and Replacement


   Type Designator: CEB6601
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm
   Package: TO263
 

 CEB6601 substitution

   - MOSFET ⓘ Cross-Reference Search

 

CEB6601 Datasheet (PDF)

 ..1. Size:428K  cet
 cep6601 ceb6601 cef6601.pdf pdf_icon

CEB6601

CEP6601/CEB6601 CEF6601P-Channel Enhancement Mode Field Effect TransistorFEATURES-60V, -19A, RDS(ON) = 86m @VGS = -10V. RDS(ON) = 125m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.GCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)TO-220 TO-220F SABSOLUTE MAXIMUM RATING

 ..2. Size:1963K  cn vbsemi
 ceb6601.pdf pdf_icon

CEB6601

CEB6601www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.048at VGS = - 10 V- 35- 60 60 100 % Rg and UIS Tested0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Power Switch Load S

Datasheet: CEB12P10 , CEB14P20 , CEB15P15 , CEB20P06 , CEB20P10 , CEB30P03 , CEB35P10 , CEB50P03 , IRF1010E , CEB95P04 , CED05P03 , CED11P20 , CED12P10 , CED20P06 , CED20P10 , CED2303 , CED30P10 .

History: SM4331PSK | NP84N075MUE | SIHFB9N65A | SUM110N08-07P | DMS3014SFG | HMS4264 | DMN1032UCB4

Keywords - CEB6601 MOSFET datasheet

 CEB6601 cross reference
 CEB6601 equivalent finder
 CEB6601 lookup
 CEB6601 substitution
 CEB6601 replacement

 

 
Back to Top

 


 
.