CEB6601 Specs and Replacement
Type Designator: CEB6601
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm
Package: TO263
CEB6601 substitution
- MOSFET ⓘ Cross-Reference Search
CEB6601 datasheet
cep6601 ceb6601 cef6601.pdf
CEP6601/CEB6601 CEF6601 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -19A, RDS(ON) = 86m @VGS = -10V. RDS(ON) = 125m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F S ABSOLUTE MAXIMUM RATING... See More ⇒
ceb6601.pdf
CEB6601 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.048at VGS = - 10 V - 35 - 60 60 100 % Rg and UIS Tested 0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Power Switch Load S... See More ⇒
Detailed specifications: CEB12P10, CEB14P20, CEB15P15, CEB20P06, CEB20P10, CEB30P03, CEB35P10, CEB50P03, IRF9540N, CEB95P04, CED05P03, CED11P20, CED12P10, CED20P06, CED20P10, CED2303, CED30P10
Keywords - CEB6601 MOSFET specs
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