CEB95P04 Datasheet and Replacement
Type Designator: CEB95P04
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 93 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 650 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
Package: TO263
CEB95P04 substitution
CEB95P04 Datasheet (PDF)
cep95p04 ceb95p04.pdf

CEP95P04/CEB95P04P-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES-40V, -93A, RDS(ON) =8.4m @VGS = -10V.RDS(ON) =12m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIM
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SM3319NSQG | SIHF630 | IRFU320A | 2N6761
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History: SM3319NSQG | SIHF630 | IRFU320A | 2N6761



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