CEB95P04 Specs and Replacement

Type Designator: CEB95P04

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 93 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 650 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm

Package: TO263

CEB95P04 substitution

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CEB95P04 datasheet

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cep95p04 ceb95p04.pdf pdf_icon

CEB95P04

CEP95P04/CEB95P04 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -40V, -93A, RDS(ON) =8.4m @VGS = -10V. RDS(ON) =12m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIM... See More ⇒

Detailed specifications: CEB14P20, CEB15P15, CEB20P06, CEB20P10, CEB30P03, CEB35P10, CEB50P03, CEB6601, IRF4905, CED05P03, CED11P20, CED12P10, CED20P06, CED20P10, CED2303, CED30P10, CED3301

Keywords - CEB95P04 MOSFET specs

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