All MOSFET. CEB95P04 Datasheet

 

CEB95P04 Datasheet and Replacement


   Type Designator: CEB95P04
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 93 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 650 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
   Package: TO263
 

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CEB95P04 Datasheet (PDF)

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 cep95p04 ceb95p04.pdf pdf_icon

CEB95P04

CEP95P04/CEB95P04P-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES-40V, -93A, RDS(ON) =8.4m @VGS = -10V.RDS(ON) =12m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIM

Datasheet: CEB14P20 , CEB15P15 , CEB20P06 , CEB20P10 , CEB30P03 , CEB35P10 , CEB50P03 , CEB6601 , IRF4905 , CED05P03 , CED11P20 , CED12P10 , CED20P06 , CED20P10 , CED2303 , CED30P10 , CED3301 .

History: FQP5N60C | 2SK1120 | IXFX16N90 | HUFA75623S3ST | JANSR2N7404

Keywords - CEB95P04 MOSFET datasheet

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