CEB95P04 Specs and Replacement
Type Designator: CEB95P04
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 93 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 650 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
Package: TO263
CEB95P04 substitution
- MOSFET ⓘ Cross-Reference Search
CEB95P04 datasheet
cep95p04 ceb95p04.pdf
CEP95P04/CEB95P04 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -40V, -93A, RDS(ON) =8.4m @VGS = -10V. RDS(ON) =12m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIM... See More ⇒
Detailed specifications: CEB14P20, CEB15P15, CEB20P06, CEB20P10, CEB30P03, CEB35P10, CEB50P03, CEB6601, IRF4905, CED05P03, CED11P20, CED12P10, CED20P06, CED20P10, CED2303, CED30P10, CED3301
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