CED11P20 Specs and Replacement

Type Designator: CED11P20

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 74 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO251

CED11P20 substitution

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CED11P20 datasheet

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 ced11p20 ceu11p20.pdf pdf_icon

CED11P20

CED11P20/CEU11P20 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES -200V, -10.5A, RDS(ON) = 0.36 @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATI... See More ⇒

Detailed specifications: CEB20P06, CEB20P10, CEB30P03, CEB35P10, CEB50P03, CEB6601, CEB95P04, CED05P03, AO3401, CED12P10, CED20P06, CED20P10, CED2303, CED30P10, CED3301, CED3423, CED4201

Keywords - CED11P20 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.