All MOSFET. CED11P20 Datasheet

 

CED11P20 Datasheet and Replacement


   Type Designator: CED11P20
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 10.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 52 nC
   tr ⓘ - Rise Time: 74 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO251
 

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CED11P20 Datasheet (PDF)

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CED11P20

CED11P20/CEU11P20PRELIMINARYP-Channel Enhancement Mode Field Effect TransistorFEATURES-200V, -10.5A, RDS(ON) = 0.36 @VGS = -10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.DTO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATI

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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