CED30P10 Specs and Replacement

Type Designator: CED30P10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 345 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm

Package: TO251

CED30P10 substitution

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CED30P10 datasheet

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 ced30p10 ceu30p10.pdf pdf_icon

CED30P10

CED30P10/CEU30P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -30A, RDS(ON) = 76m @VGS = -10V. RDS(ON) = 92m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE ... See More ⇒

 9.1. Size:392K  cet
 ceu3060 ced3060.pdf pdf_icon

CED30P10

CED3060/CEU3060 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A , RDS(ON) = 6.6m @VGS = 10V. RDS(ON) = 9.5m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXI... See More ⇒

Detailed specifications: CEB6601, CEB95P04, CED05P03, CED11P20, CED12P10, CED20P06, CED20P10, CED2303, SKD502T, CED3301, CED3423, CED4201, CED4301, CED4311, CED6601, CED6861, CED95P04

Keywords - CED30P10 MOSFET specs

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