All MOSFET. CED30P10 Datasheet

 

CED30P10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CED30P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 78 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 345 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm
   Package: TO251

 CED30P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CED30P10 Datasheet (PDF)

 ..1. Size:417K  cet
 ced30p10 ceu30p10.pdf

CED30P10 CED30P10

CED30P10/CEU30P10P-Channel Enhancement Mode Field Effect TransistorFEATURES-100V, -30A, RDS(ON) = 76m @VGS = -10V. RDS(ON) = 92m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE

 9.1. Size:392K  cet
 ceu3060 ced3060.pdf

CED30P10 CED30P10

CED3060/CEU3060N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 75A , RDS(ON) = 6.6m @VGS = 10V. RDS(ON) = 9.5m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXI

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXFN64N50PD3

 

 
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