CED3301 Specs and Replacement

Type Designator: CED3301

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TO251

CED3301 substitution

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CED3301 datasheet

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 ced3301 ceu3301.pdf pdf_icon

CED3301

CED3301/CEU3301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -28A, RDS(ON) = 32m @VGS = -10V. RDS(ON) = 50m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAX... See More ⇒

Detailed specifications: CEB95P04, CED05P03, CED11P20, CED12P10, CED20P06, CED20P10, CED2303, CED30P10, K4145, CED3423, CED4201, CED4301, CED4311, CED6601, CED6861, CED95P04, CEF14P20

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