All MOSFET. CED3301 Datasheet

 

CED3301 Datasheet and Replacement


   Type Designator: CED3301
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 24 nC
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO251
 

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CED3301 Datasheet (PDF)

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CED3301

CED3301/CEU3301P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -28A, RDS(ON) = 32m @VGS = -10V. RDS(ON) = 50m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAX

Datasheet: CEB95P04 , CED05P03 , CED11P20 , CED12P10 , CED20P06 , CED20P10 , CED2303 , CED30P10 , IRFB3607 , CED3423 , CED4201 , CED4301 , CED4311 , CED6601 , CED6861 , CED95P04 , CEF14P20 .

History: FDS8949F085

Keywords - CED3301 MOSFET datasheet

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