CED3423 Datasheet and Replacement
Type Designator: CED3423
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 12.5 nC
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 135 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: TO251
CED3423 substitution
CED3423 Datasheet (PDF)
ced3423 ceu3423.pdf

CED3423/CEU3423P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -18A, RDS(ON) = 45m @VGS = -10V. RDS(ON) = 80m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAX
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: IXTH39N08MB | 2N6758JTX | 2SK4116LS | SM2501NSU
Keywords - CED3423 MOSFET datasheet
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History: IXTH39N08MB | 2N6758JTX | 2SK4116LS | SM2501NSU



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