CED3423 MOSFET. Datasheet pdf. Equivalent
Type Designator: CED3423
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 31 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 5 nS
Drain-Source Capacitance (Cd): 135 pF
Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm
Package: TO251
CED3423 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CED3423 Datasheet (PDF)
1.1. ced3423 ceu3423.pdf 
Size:394K _cet
CED3423/CEU3423 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -18A, RDS(ON) = 45m? @VGS = -10V. RDS(ON) = 80m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RA
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