All MOSFET. CED6601 Datasheet

 

CED6601 Datasheet and Replacement


   Type Designator: CED6601
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 22.6 nC
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm
   Package: TO251
 

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CED6601 Datasheet (PDF)

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CED6601

CED6601/CEU6601P-Channel Enhancement Mode Field Effect TransistorFEATURES-60V, -16A, RDS(ON) = 86m @VGS = -10V. RDS(ON) = 125m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MA

Datasheet: CED20P10 , CED2303 , CED30P10 , CED3301 , CED3423 , CED4201 , CED4301 , CED4311 , IRF530 , CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 .

History: RU6H5L | FRK254D | FDY1002PZ

Keywords - CED6601 MOSFET datasheet

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