All MOSFET. CED95P04 Datasheet

 

CED95P04 MOSFET. Datasheet pdf. Equivalent

Type Designator: CED95P04

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 73.5 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 77 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 59 nC

Rise Time (tr): 18 nS

Drain-Source Capacitance (Cd): 650 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0086 Ohm

Package: TO251

CED95P04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CED95P04 Datasheet (PDF)

0.1. ced95p04 ceu95p04.pdf Size:400K _cet

CED95P04 CED95P04

CED95P04/CEU95P04 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -40V, -77A, RDS(ON) =8.6mΩ @VGS = -10V. RDS(ON) =12mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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