CED95P04 Specs and Replacement
Type Designator: CED95P04
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 73.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 77 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 650 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0086 Ohm
Package: TO251
CED95P04 substitution
- MOSFET ⓘ Cross-Reference Search
CED95P04 datasheet
ced95p04 ceu95p04.pdf
CED95P04/CEU95P04 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -40V, -77A, RDS(ON) =8.6m @VGS = -10V. RDS(ON) =12m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ... See More ⇒
Detailed specifications: CED30P10 , CED3301 , CED3423 , CED4201 , CED4301 , CED4311 , CED6601 , CED6861 , AON6380 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , CEH2321A , CEH2331 .
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