CEF14P20 Datasheet and Replacement
Type Designator: CEF14P20
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 74 nS
Cossⓘ - Output Capacitance: 240 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO220F
CEF14P20 substitution
CEF14P20 Datasheet (PDF)
cef14p20 cep14p20 ceb14p20.pdf

CEP14P20/CEB14P20CEF14P20PRELIMINARYP-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP14P20 -200V 0.36 -13.5A -10VCEB14P20 -200V 0.36 -13.5A -10VCEF14P20 -200V 0.36 -13.5A d -10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIE
cep14n5 ceb14n5 cef14n5.pdf

CEP14N5/CEB14N5CEF14N5PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP14N5 500V 0.38 14A 10VCEB14N5 500V 0.38 14A 10VCEF14N5 500V 0.38 14A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SER
Datasheet: CED3301 , CED3423 , CED4201 , CED4301 , CED4311 , CED6601 , CED6861 , CED95P04 , AO4407 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , CEH2321A , CEH2331 , CEH3456 .
History: MDD4N60BRH
Keywords - CEF14P20 MOSFET datasheet
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History: MDD4N60BRH



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