CEH3456 Datasheet and Replacement
Type Designator: CEH3456
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 11 nC
tr ⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: TSOP6
CEH3456 substitution
CEH3456 Datasheet (PDF)
ceh3456.pdf
CEH3456N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 5.5A, RDS(ON) = 42m @VGS = 10V. RDS(ON) = 59m @VGS = 4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.D(1,2,5,6,)Lead free product is acquired.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limi
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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