CEH3456 MOSFET. Datasheet pdf. Equivalent
Type Designator: CEH3456
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 5.5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 2 nS
Drain-Source Capacitance (Cd): 140 pF
Maximum Drain-Source On-State Resistance (Rds): 0.042 Ohm
Package: TSOP6
CEH3456 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEH3456 Datasheet (PDF)
0.1. ceh3456.pdf 
Size:164K _cet
CEH3456N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 5.5A, RDS(ON) = 42m @VGS = 10V. RDS(ON) = 59m @VGS = 4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.D(1,2,5,6,)Lead free product is acquired.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limi
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