CEH3456 MOSFET. Datasheet pdf. Equivalent
Type Designator: CEH3456
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 5.5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 2 nS
Drain-Source Capacitance (Cd): 140 pF
Maximum Drain-Source On-State Resistance (Rds): 0.042 Ohm
Package: TSOP6
CEH3456 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEH3456 Datasheet (PDF)
0.1. ceh3456.pdf 
Size:164K _cet
CEH3456 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 5.5A, RDS(ON) = 42mΩ @VGS = 10V. RDS(ON) = 59mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limi
Datasheet: CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , CEH2321A , CEH2331 , IRFB4227 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 .
