All MOSFET. CEH3456 Datasheet

 

CEH3456 Datasheet and Replacement


   Type Designator: CEH3456
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: TSOP6
 

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CEH3456 Datasheet (PDF)

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CEH3456

CEH3456N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 5.5A, RDS(ON) = 42m @VGS = 10V. RDS(ON) = 59m @VGS = 4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.D(1,2,5,6,)Lead free product is acquired.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limi

Datasheet: CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , CEH2321A , CEH2331 , 18N50 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 .

History: 2SK3147S

Keywords - CEH3456 MOSFET datasheet

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