All MOSFET. CEM2187 Equivalents Search

 

CEM2187 Specs and Replacement


   Type Designator: CEM2187
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 505 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SO8
 

 CEM2187 substitution

   - MOSFET ⓘ Cross-Reference Search

 

CEM2187 Specs

 ..1. Size:440K  cet
 cem2187.pdf pdf_icon

CEM2187

CEM2187 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -7.6A, RDS(ON) = 22m @VGS = -4.5V. RDS(ON) = 32m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unle... See More ⇒

 8.1. Size:407K  cet
 cem2182.pdf pdf_icon

CEM2187

CEM2182 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 9.3A, RDS(ON) = 18m @VGS = 4.5V. RDS(ON) = 24m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25... See More ⇒

 9.1. Size:356K  cet
 cem2133.pdf pdf_icon

CEM2187

CEM2133 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -10A, RDS(ON) = 18m @VGS = -4.5V. RDS(ON) = 27m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA =... See More ⇒

 9.2. Size:324K  cet
 cem2163.pdf pdf_icon

CEM2187

CEM2163 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -8.9A, RDS(ON) = 20m @VGS = -4.5V. RDS(ON) = 30m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless oth... See More ⇒

SHOW MORE

Detailed specifications: CEF6601 , CEH2305 , CEH2313 , CEH2321 , CEH2321A , CEH2331 , CEH3456 , CEM2163 , IRFP250 , CEM2281 , CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 .

Keywords - CEM2187 MOSFET specs

 CEM2187 cross reference
 CEM2187 equivalent finder
 CEM2187 lookup
 CEM2187 substitution
 CEM2187 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
Back to Top

 


 
.