All MOSFET. CEM2187 Datasheet

 

CEM2187 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEM2187

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 7.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 31.5 nC

Rise Time (tr): 18 nS

Drain-Source Capacitance (Cd): 505 pF

Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm

Package: SO8

CEM2187 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEM2187 Datasheet (PDF)

0.1. cem2187.pdf Size:440K _cet

CEM2187
CEM2187

CEM2187 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -7.6A, RDS(ON) = 22mΩ @VGS = -4.5V. RDS(ON) = 32mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unle

8.1. cem2182.pdf Size:407K _cet

CEM2187
CEM2187

CEM2182 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 9.3A, RDS(ON) = 18mΩ @VGS = 4.5V. RDS(ON) = 24mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25

 9.1. cem2163.pdf Size:325K _cet

CEM2187
CEM2187

CEM2163 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -8.9A, RDS(ON) = 20mΩ @VGS = -4.5V. RDS(ON) = 30mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless oth

9.2. cem2133.pdf Size:356K _cet

CEM2187
CEM2187

CEM2133 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -10A, RDS(ON) = 18mΩ @VGS = -4.5V. RDS(ON) = 27mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA =

Datasheet: CEF6601 , CEH2305 , CEH2313 , CEH2321 , CEH2321A , CEH2331 , CEH3456 , CEM2163 , BF245C , CEM2281 , CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 .

 

 
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