CEM2187 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CEM2187
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 2 W
Tensión drenaje-fuente (Vds): 20 V
Tensión compuerta-fuente (Vgs): 12 V
Corriente continua de drenaje (Id): 7.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Carga de compuerta (Qg): 31.5 nC
Tiempo de elevación (tr): 18 nS
Conductancia de drenaje-sustrato (Cd): 505 pF
Resistencia drenaje-fuente RDS(on): 0.022 Ohm
Empaquetado / Estuche: SO8
Búsqueda de reemplazo de MOSFET CEM2187
CEM2187 Datasheet (PDF)
1.1. cem2187.pdf 
Size:440K _cet
CEM2187 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -7.6A, RDS(ON) = 22mΩ @VGS = -4.5V. RDS(ON) = 32mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unle
4.1. cem2182.pdf Size:407K _cet
CEM2182 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 9.3A, RDS(ON) = 18mΩ @VGS = 4.5V. RDS(ON) = 24mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25
5.1. cem2163.pdf Size:325K _cet
CEM2163 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -8.9A, RDS(ON) = 20mΩ @VGS = -4.5V. RDS(ON) = 30mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless oth
5.2. cem2133.pdf Size:356K _cet
CEM2133 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -10A, RDS(ON) = 18mΩ @VGS = -4.5V. RDS(ON) = 27mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA =
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
