CEM2187 - Даташиты. Аналоги. Основные параметры

CEM2187 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -7.6A, RDS(ON) = 22m @VGS = -4.5V. RDS(ON) = 32m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unle

CEM2182 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 9.3A, RDS(ON) = 18m @VGS = 4.5V. RDS(ON) = 24m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25

CEM2133 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -10A, RDS(ON) = 18m @VGS = -4.5V. RDS(ON) = 27m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA =

CEM2163 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -8.9A, RDS(ON) = 20m @VGS = -4.5V. RDS(ON) = 30m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless oth

CEM2192 Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 8A, RDS(ON) = 24m @VGS = 4.5V. RDS(ON) = 35m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA

CEM2163 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typical E