CEM2281 MOSFET. Datasheet pdf. Equivalent
Type Designator: CEM2281
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Drain Current |Id|: 7.2 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 295 pF
Maximum Drain-Source On-State Resistance (Rds): 0.03 Ohm
Package: SO8
CEM2281 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEM2281 Datasheet (PDF)
1.1. cem2281.pdf 
Size:271K _cet
CEM2281 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -7.2A, RDS(ON) = 30m? @VGS = -4.5V. RDS(ON) = 43m? @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unles
Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
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