CEM2281 MOSFET. Datasheet pdf. Equivalent
Type Designator: CEM2281
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 7.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 295 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SO8
CEM2281 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEM2281 Datasheet (PDF)
cem2281.pdf
CEM2281P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-20V, -7.2A, RDS(ON) = 30m @VGS = -4.5V. RDS(ON) = 43m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25
Datasheet: CEH2305 , CEH2313 , CEH2321 , CEH2321A , CEH2331 , CEH3456 , CEM2163 , CEM2187 , IRFZ46N , CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L .
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MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F