CEM2281 Datasheet. Specs and Replacement
Type Designator: CEM2281 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 295 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SO8
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CEM2281 datasheet
cem2281.pdf
CEM2281 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -7.2A, RDS(ON) = 30m @VGS = -4.5V. RDS(ON) = 43m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 ... See More ⇒
Detailed specifications: CEH2305, CEH2313, CEH2321, CEH2321A, CEH2331, CEH3456, CEM2163, CEM2187, IRF1407, CEM2401, CEM2407, CEM3053, CEM3083, CEM3301, CEM3307, CEM3317, CEM3405L
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