All MOSFET. CEM2281 Datasheet

 

CEM2281 Datasheet and Replacement


   Type Designator: CEM2281
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 295 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SO8
 

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CEM2281 Datasheet (PDF)

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CEM2281

CEM2281P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-20V, -7.2A, RDS(ON) = 30m @VGS = -4.5V. RDS(ON) = 43m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25

Datasheet: CEH2305 , CEH2313 , CEH2321 , CEH2321A , CEH2331 , CEH3456 , CEM2163 , CEM2187 , P0903BDG , CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L .

History: AG8N60S | STD3LN62K3 | SST108 | STD3N62K3 | FHU100N03C | 25N06L-TN3 | DMG6602SVT

Keywords - CEM2281 MOSFET datasheet

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