CEM2281 MOSFET. Datasheet pdf. Equivalent
Type Designator: CEM2281
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Drain Current |Id|: 7.2 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 295 pF
Maximum Drain-Source On-State Resistance (Rds): 0.03 Ohm
Package: SO8
CEM2281 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEM2281 Datasheet (PDF)
0.1. cem2281.pdf 
Size:271K _cet
CEM2281P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-20V, -7.2A, RDS(ON) = 30m @VGS = -4.5V. RDS(ON) = 43m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25
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