All MOSFET. CEM3307 Datasheet

 

CEM3307 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEM3307
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 6.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: SO8

 CEM3307 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEM3307 Datasheet (PDF)

 ..1. Size:455K  cet
cem3307.pdf

CEM3307
CEM3307

CEM3307P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -6.2A, RDS(ON) = 33m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unles

 ..2. Size:866K  cn vbsemi
cem3307.pdf

CEM3307
CEM3307

CEM3307www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top View

 8.1. Size:440K  cet
cem3301.pdf

CEM3307
CEM3307

CEM3301P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -7.0A, RDS(ON) = 32m @VGS = -10V. RDS(ON) = 50m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe

 9.1. Size:896K  cet
cem3317.pdf

CEM3307
CEM3307

CEM3317P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-30V, -6.2A, RDS(ON) = 33m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V.-30V, -4.9A, RDS(ON) = 52m @VGS = -10V. RDS(ON) = 85m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).D1 D1 D2 D28 7 6 5High power and current handing capability.Lead free product is acquired.Surfa

Datasheet: CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , AO3400 , CEM3317 , CEM3405L , CEM3407L , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A .

 

 
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