All MOSFET. CEM3307 Datasheet

 

CEM3307 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEM3307

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 6.2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 6 nS

Drain-Source Capacitance (Cd): 220 pF

Maximum Drain-Source On-State Resistance (Rds): 0.033 Ohm

Package: SO8

CEM3307 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEM3307 Datasheet (PDF)

0.1. cem3307.pdf Size:455K _cet

CEM3307
CEM3307

CEM3307P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -6.2A, RDS(ON) = 33m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unles

8.1. cem3301.pdf Size:440K _cet

CEM3307
CEM3307

CEM3301P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -7.0A, RDS(ON) = 32m @VGS = -10V. RDS(ON) = 50m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe

 9.1. cem3317.pdf Size:896K _cet

CEM3307
CEM3307

CEM3317P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-30V, -6.2A, RDS(ON) = 33m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V.-30V, -4.9A, RDS(ON) = 52m @VGS = -10V. RDS(ON) = 85m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).D1 D1 D2 D28 7 6 5High power and current handing capability.Lead free product is acquired.Surfa

Datasheet: CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , IRFP260N , CEM3317 , CEM3405L , CEM3407L , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A .

 

 
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