All MOSFET. CEM3405L Datasheet

 

CEM3405L MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEM3405L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 5.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.5 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: SO8

 CEM3405L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEM3405L Datasheet (PDF)

 ..1. Size:106K  cet
 cem3405l.pdf

CEM3405L CEM3405L

CEM3405LP-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-30V, -5.7A, RDS(ON) = 48m @VGS = -10V. RDS(ON) = 62m @VGS = -4.5V. RDS(ON) = 115m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).D D D DHigh power and current handing capability.8 7 6 5Lead free product is acquired.Surface mount Package.SO-81 2 3 41 S S S G

 8.1. Size:226K  cet
 cem3407l.pdf

CEM3405L CEM3405L

CEM3407LDual P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -5.1A, RDS(ON) = 48m @VGS = -10V. RDS(ON) = 65m @VGS = -4.5V. RDS(ON) = 115m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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