CEM3407L MOSFET Datasheet: P-Ch, 30V, 5.1A. Full specification with pinout and replacement list

CEM3407L Specs and Replacement

   Type Designator: CEM3407L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: SO8

CEM3407L substitution

- MOSFET ⓘ Cross-Reference Search

CEM3407L datasheet

..1. Size:226K cet
cem3407l.pdf pdf_icon

CEM3407L Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5.1A, RDS(ON) = 48m @VGS = -10V. RDS(ON) = 65m @VGS = -4.5V. RDS(ON) = 115m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ... See More ⇒

8.1. Size:106K cet
cem3405l.pdf pdf_icon

CEM3405L P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -5.7A, RDS(ON) = 48m @VGS = -10V. RDS(ON) = 62m @VGS = -4.5V. RDS(ON) = 115m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). D D D D High power and current handing capability. 8 7 6 5 Lead free product is acquired. Surface mount Package. SO-8 1 2 3 4 1 S S S G ... See More ⇒

Detailed specifications: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , IRF520 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .