CEM4207 MOSFET. Datasheet pdf. Equivalent
Type Designator: CEM4207
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 220 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SO8
CEM4207 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEM4207 Datasheet (PDF)
cem4207.pdf
CEM4207P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-40V, -7A, RDS(ON) = 30m @VGS = -10V. RDS(ON) = 40m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS
cem4201.pdf
CEM4201P-Channel Enhancement Mode Field Effect TransistorFEATURES-40V, -7.5A, RDS(ON) = 28m @VGS = -10V. RDS(ON) = 38m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe
cem4204.pdf
CEM4204N-Channel Enhancement Mode Field Effect TransistorFEATURES40V, 7.3A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 42m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwis
cem4282.pdf
CEM4282N-Channel Enhancement Mode Field Effect TransistorFEATURES540V, 6.6A, RDS(ON) = 36m @VGS = 10V. RDS(ON) = 48m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless other
cem4279.pdf
CEM4279Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURES540V, 6.1A, RDS(ON) = 32m @VGS = 10V. RDS(ON) = 46m @VGS = 4.5V.-40V, -4.3A, RDS(ON) = 66m @VGS = -10V. RDS(ON) = 105m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D28 7 6 5High power and current handing capability.Lead free product is acquired.Surfa
cem4228.pdf
CEM4228Dual N-Channel Enhancement Mode Field Effect TransistorFEATURES540V, 6.3A, RDS(ON) = 30m @VGS = 10V. RDS(ON) = 45m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C
cem4248.pdf
CEM4282N-Channel Enhancement Mode Field Effect TransistorFEATURES540V, 6.6A, RDS(ON) = 36m @VGS = 10V. RDS(ON) = 48m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless other
cem4269.pdf
CEM4269Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURES40V, 6.1A, RDS(ON) = 32m @VGS = 10V. RDS(ON) = 46m @VGS = 4.5V.-40V, -5.2A, RDS(ON) = 43m @VGS = 10V. RDS(ON) = 65m @VGS = 4.5V.D1 D1 D2 D2Super high dense cell design for extremely low RDS(ON).8 7 6 5High power and current handing capability.Lead free product is acquired.Surface mo
cem4228.pdf
CEM4228www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918