CEM4207 MOSFET PDF: P-Ch, 40V, 7A. Datasheet. Full specification with pinout and replacement list

CEM4207 Specs and Replacement

   Type Designator: CEM4207
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SO8

CEM4207 substitution

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CEM4207 datasheet

..1. Size:441K cet
cem4207.pdf pdf_icon

CEM4207 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -40V, -7A, RDS(ON) = 30m @VGS = -10V. RDS(ON) = 40m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS... See More ⇒

8.1. Size:411K cet
cem4201.pdf pdf_icon

CEM4201 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -7.5A, RDS(ON) = 28m @VGS = -10V. RDS(ON) = 38m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe... See More ⇒

8.2. Size:407K cet
cem4204.pdf pdf_icon

CEM4204 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 7.3A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 42m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwis... See More ⇒

9.1. Size:737K cet
cem4282.pdf pdf_icon

CEM4282 N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 40V, 6.6A, RDS(ON) = 36m @VGS = 10V. RDS(ON) = 48m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless other... See More ⇒