CEM4435A Datasheet and Replacement
Type Designator: CEM4435A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 285 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SO8
CEM4435A substitution
CEM4435A Datasheet (PDF)
cem4435a.pdf

CEM4435AP-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -8A, RDS(ON) = 20m @VGS = -10V. RDS(ON) = 33m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless other
cem4435a.pdf

CEM4435Awww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D
Datasheet: CEM3307 , CEM3317 , CEM3405L , CEM3407L , CEM4201 , CEM4207 , CEM4301 , CEM4311 , K2611 , CEM4948 , CEM4953 , CEM4953A , CEM4953H , CEM6601 , CEM6607 , CEM6861 , CEM6867 .
History: 2SK3272-01L | IRF624S
Keywords - CEM4435A MOSFET datasheet
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History: 2SK3272-01L | IRF624S



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