All MOSFET. CEM4435A Datasheet

 

CEM4435A MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEM4435A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Maximum Power Dissipation (Pd): 2.5 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Drain Current |Id|: 8 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 9 nS
   Drain-Source Capacitance (Cd): 285 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm
   Package: SO8

 CEM4435A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEM4435A Datasheet (PDF)

 ..1. Size:380K  cet
cem4435a.pdf

CEM4435A
CEM4435A

CEM4435AP-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -8A, RDS(ON) = 20m @VGS = -10V. RDS(ON) = 33m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless other

 ..2. Size:872K  cn vbsemi
cem4435a.pdf

CEM4435A
CEM4435A

CEM4435Awww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

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