All MOSFET. CEM4435A Datasheet

 

CEM4435A MOSFET. Datasheet pdf. Equivalent

Type Designator: CEM4435A

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 285 pF

Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm

Package: SO8

CEM4435A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEM4435A Datasheet (PDF)

1.1. cem4435a.pdf Size:390K _cet

CEM4435A
CEM4435A

CEM4435A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -8A, RDS(ON) = 20m? @VGS = -10V. RDS(ON) = 33m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise no

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