All MOSFET. CEM8311 Datasheet

 

CEM8311 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEM8311
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 7.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16.4 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 395 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SO8

 CEM8311 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEM8311 Datasheet (PDF)

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 cem8311.pdf

CEM8311 CEM8311

CEM8311Dual P-Channel Enhancement Mode Field Effect TransistorFEATURES5-30V, -7.9A, RDS(ON) = 20m @VGS = -10V. RDS(ON) = 33m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 2

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FDC6305N

 

 
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