All MOSFET. CEM8311 Datasheet

 

CEM8311 Datasheet and Replacement


   Type Designator: CEM8311
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 395 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SO8
 

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CEM8311 Datasheet (PDF)

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CEM8311

CEM8311Dual P-Channel Enhancement Mode Field Effect TransistorFEATURES5-30V, -7.9A, RDS(ON) = 20m @VGS = -10V. RDS(ON) = 33m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 2

Datasheet: CEM4948 , CEM4953 , CEM4953A , CEM4953H , CEM6601 , CEM6607 , CEM6861 , CEM6867 , STP65NF06 , CEM8435A , CEM9407A , CEM9435 , CEM9435A , CEM9953A , CEN2301 , CEP05P03 , CEP12P10 .

History: BSZ0908ND | MPSW60M086CFD | GSM1013E | 24NM60L-TF3-T | STB19NF20 | 2SK3479-S | 24NM60L-TQ2-T

Keywords - CEM8311 MOSFET datasheet

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