CEM9407A Datasheet. Specs and Replacement

Type Designator: CEM9407A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.5 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: SO8

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CEM9407A datasheet

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CEM9407A

CEM9407A PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -60V, -3.7A, RDS(ON) = 125m @VGS = -10V. RDS(ON) = 165m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA... See More ⇒

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CEM9407A

CEM9435 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5A, RDS(ON) = 60m @VGS = -10V. RDS(ON) = 95m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless o... See More ⇒

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CEM9407A

CEM9436A N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 6.2A, RDS(ON) = 38m @VGS = 10V. RDS(ON) = 52m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe... See More ⇒

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CEM9407A

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Detailed specifications: CEM4953A, CEM4953H, CEM6601, CEM6607, CEM6861, CEM6867, CEM8311, CEM8435A, IRFB31N20D, CEM9435, CEM9435A, CEM9953A, CEN2301, CEP05P03, CEP12P10, CEP14P20, CEP15P15

Keywords - CEM9407A MOSFET specs

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