CEM9407A Datasheet and Replacement
Type Designator: CEM9407A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.5 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: SO8
CEM9407A Datasheet (PDF)
cem9407a.pdf

CEM9407APRELIMINARYP-Channel Enhancement Mode Field Effect TransistorFEATURES5-60V, -3.7A, RDS(ON) = 125m @VGS = -10V. RDS(ON) = 165m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA
cem9435.pdf

CEM9435P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -5A, RDS(ON) = 60m @VGS = -10V. RDS(ON) = 95m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless o
cem9436a.pdf

CEM9436AN-Channel Enhancement Mode Field Effect TransistorFEATURES530V, 6.2A, RDS(ON) = 38m @VGS = 10V. RDS(ON) = 52m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe
Datasheet: CEM4953A , CEM4953H , CEM6601 , CEM6607 , CEM6861 , CEM6867 , CEM8311 , CEM8435A , 60N06 , CEM9435 , CEM9435A , CEM9953A , CEN2301 , CEP05P03 , CEP12P10 , CEP14P20 , CEP15P15 .
History: FQB3N25TM | AP04N20GK-HF | SDF1NA60JDA
Keywords - CEM9407A MOSFET datasheet
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History: FQB3N25TM | AP04N20GK-HF | SDF1NA60JDA



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