All MOSFET. CEP35P10 Datasheet

 

CEP35P10 Datasheet and Replacement


   Type Designator: CEP35P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 335 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm
   Package: TO220
 

 CEP35P10 substitution

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CEP35P10 Datasheet (PDF)

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CEP35P10

CEP35P10/CEB35P10CEF35P10P-Channel Enhancement Mode Field Effect TransistorFEATURES-100V, -32A, RDS(ON) =76m @VGS = -10V. RDS(ON) =92m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM

Datasheet: CEN2301 , CEP05P03 , CEP12P10 , CEP14P20 , CEP15P15 , CEP20P06 , CEP20P10 , CEP30P03 , IRFP064N , CEP50P03 , CEP6601 , CEP95P04 , CES2301 , CES2303 , CES2305 , CES2307 , CES2307A .

History: P5506HVA | DMJ70H1D4SV3 | 2SK2479

Keywords - CEP35P10 MOSFET datasheet

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