CEP35P10 Datasheet. Specs and Replacement

Type Designator: CEP35P10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 335 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm

Package: TO220

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CEP35P10 datasheet

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CEP35P10

CEP35P10/CEB35P10 CEF35P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -32A, RDS(ON) =76m @VGS = -10V. RDS(ON) =92m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM... See More ⇒

Detailed specifications: CEN2301, CEP05P03, CEP12P10, CEP14P20, CEP15P15, CEP20P06, CEP20P10, CEP30P03, 2SK2842, CEP50P03, CEP6601, CEP95P04, CES2301, CES2303, CES2305, CES2307, CES2307A

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