All MOSFET. CET4301 Datasheet

 

CET4301 Datasheet and Replacement


   Type Designator: CET4301
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
   Package: SOT223
 

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CET4301 Datasheet (PDF)

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CET4301

CET4301P-Channel Enhancement Mode Field Effect TransistorFEATURES-40V, -6.3A, RDS(ON) = 44m @VGS = -10V. RDS(ON) = 68m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-223 package.GDSDGSOT-223SABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-S

Datasheet: CES2309 , CES2313 , CES2313A , CES2317 , CES2321 , CES2321A , CES2323 , CES2331 , 10N60 , CET4435A , CET6601 , CET6861 , CET9435A , CEU05P03 , CEU11P20 , CEU12P10 , CEU20P06 .

History: INK021AAP1 | IXTT10P50

Keywords - CET4301 MOSFET datasheet

 CET4301 cross reference
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