All MOSFET. CET4435A Datasheet

 

CET4435A Datasheet and Replacement


   Type Designator: CET4435A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: SOT223
 

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CET4435A Datasheet (PDF)

 ..1. Size:143K  cet
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CET4435A

CET4435AP-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -8.8A, RDS(ON) = 24m @VGS = -10V. RDS(ON) = 35m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-223 package.GDSDGSOT-223SABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-

 ..2. Size:892K  cn vbsemi
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CET4435A

CET4435Awww.VBsemi.twP-Channel 35 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET- 35 9.8 nC0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECS APPLICATIONS

Datasheet: CES2313 , CES2313A , CES2317 , CES2321 , CES2321A , CES2323 , CES2331 , CET4301 , IRF3710 , CET6601 , CET6861 , CET9435A , CEU05P03 , CEU11P20 , CEU12P10 , CEU20P06 , CEU20P10 .

History: CES2331

Keywords - CET4435A MOSFET datasheet

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