CET6601 Specs and Replacement
Type Designator: CET6601
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm
Package: SOT223
CET6601 substitution
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CET6601 datasheet
cet6601.pdf
CET6601 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -4.3A, RDS(ON) = 86m @VGS = -10V. RDS(ON) = 125m @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-223 package. G D S D G SOT-223 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-... See More ⇒
Detailed specifications: CES2313A, CES2317, CES2321, CES2321A, CES2323, CES2331, CET4301, CET4435A, IRFB4227, CET6861, CET9435A, CEU05P03, CEU11P20, CEU12P10, CEU20P06, CEU20P10, CEU2303
Keywords - CET6601 MOSFET specs
CET6601 cross reference
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