All MOSFET. CET6601 Datasheet

 

CET6601 Datasheet and Replacement


   Type Designator: CET6601
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm
   Package: SOT223
 

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CET6601 Datasheet (PDF)

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CET6601

CET6601P-Channel Enhancement Mode Field Effect TransistorFEATURES-60V, -4.3A, RDS(ON) = 86m @VGS = -10V. RDS(ON) = 125m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-223 package.GDSDGSOT-223SABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-

Datasheet: CES2313A , CES2317 , CES2321 , CES2321A , CES2323 , CES2331 , CET4301 , CET4435A , AON6414A , CET6861 , CET9435A , CEU05P03 , CEU11P20 , CEU12P10 , CEU20P06 , CEU20P10 , CEU2303 .

Keywords - CET6601 MOSFET datasheet

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